The ratio of the total width to that of the center layer is 150:1. The outer layers have widths much greater than the sandwiched p- or n-type material. The emitter layer is heavily doped, the base lightly doped, and the collector only lightly doped. Both are shown in figure with proper biasing.įigure: Types of transistors: (a) pnp (b) npn. The former is called npn transistor, while latter is called an pnp transistor. If some data source only has data for the active region, this is probably good enough.Transistor is a three-layer semiconductor device consisting of either two n- and one p-type layer of material or two p- and one n-type layers of material.

In other words, all of the non-linearities are important, and the behaviour in regions outside of as well as including the active region are also important. I am interested in writing some simulations involving BJTs which requires more information than can be obtained from the typical transistor equations. Some might become dependent on each other if a complete circuit is drawn including an impedance on the base and collector (or emitter) nodes.Īre there any example devices which have (presumably large) tables of data available for download for measurements of these parameters? I don't know if these are all independent - I believe they all are. Transistor temperature, which other variables such as the Collector-Emitter current, might have a second order effect from.Transistor HFE (beta) which is a function of temperature.

To explain further, for a simple BJT circuit we have the following variables.

Is there anywhere I can download some current-voltage data for a bipolar junction transistor? (It doesn't matter that much which one.)

Download bipolar junction transistor